View MT5C2568F-20883C_4476096.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Austin Semiconductor, Inc. 32K x 8 SRAM
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY SPECIFICATIONS
*SMD 5962-88662 *SMD 5962-88552 *MIL-STD-883
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15
MT5C2568 AS5C2568
SRAM
PIN ASSIGNMENT (Top View)
28-PIN SOJ (DCJ) 28-Pin DIP (C, CW)
VCC WE\ A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 DQ6 DQ5 DQ4
32-Pin LCC (ECW)
4 3 2 1 32 31 30
FEATURES
* * * * * * * Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns Battery Backup: 2V data retention Low power standby High-performance, low-power CMOS double-metal process Single +5V (+10%) Power Supply Easy memory expansion with CE\ All inputs and outputs are TTL compatible
A6 A5 A4 A3 A2 A1 A0 NC DQ1
5 6 7 8 9 10 11 12 13
A7 A12 A14 NC VCC WE\ A13
29 28 27 26 25 24 23 22 21
A8 A9 A11 NC OE\ A10 CE\ DQ8 DQ7
14 15 16 17 18 19 20
OPTIONS
* Timing 12ns access1 15ns access1 20ns access 25ns access 35ns access 45ns access 55ns access2 70ns access2 100ns access * Package(s)3 Ceramic DIP (300 mil) Ceramic DIP (600 mil) Ceramic LCC (28 leads) Ceramic LCC (32 leads) Ceramic Flat Pack Ceramic SOJ * Operating Temperature Ranges Military -55oC to +125oC Industrial -40oC to +85oC * 2V data retention/low power
MARKING
-12 -15 -20 -25 -35 -45 -55 -70 -100
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14
28-Pin Flat Pack (F)
28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE\ A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 DQ6 DQ5 DQ4
3 2 1 28 27
A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2
4 5 6 7 8 9 10 11 12
A7 A12 A14 VCC WE\
26 25 24 23 22 21 20 19 18
DQ2 DQ3 VSS NC DQ4 DQ5 DQ6
28-Pin LCC (EC)
A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7
13 14 15 16 17
C CW EC ECW F DCJ
No. 108 No. 110 No. 204 No. 208 No. 302 No. 500
GENERAL DESCRIPTION
The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE\) and output enable (OE\) capability. These enhancements can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ and OE\ go LOW. The device offers a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements. The "L" version provides a battery backup/low voltage data retention mode, offering 2mW maximum power dissipation at 2 volts. All devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible.
XT IT L
NOTES: 1. -12 available in IT only. 2. Electrical characteristics identical to those provided for the 45ns access devices. 3. Plastic SOJ (DJ Package) is available on the AS5C2568 datasheet.
For more products and information please visit our web site at www.austinsemiconductor.com
MT5C2568 / AS5C2568 Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
DQ3 VSS DQ4 DQ5 DQ6
Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM
A0
MT5C2568 AS5C2568
SRAM
Vcc
DECODER
256 x 1024 MEMORY ARRAY
GND
A14
I/O0
I/O DATA CIRCUIT
I/O7
COLUMN I/O
9A128-1 CE\
OE\
CONTROL CIRCUIT
WE\
TRUTH TABLE
MODE STANDBY READ READ WRITE OE\ X L H X CE\ H L L L WE\ X H H L DQ HIGH-Z Q HIGH-Z D POWER STANDBY ACTIVE ACTIVE ACTIVE
MT5C2568 / AS5C2568 Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS* Voltage on Any Input or DQ Relative to Vss..................................................................-0.5V to Vcc +0.5V Voltage on Vcc Supply Relative to Vss.......................-1V to +7V Storage Temperature..............................................-65oC to +150oC Power Dissipation.......................................................................1W Short Circuit Output Current.................................................50mA Lead Temperature (soldering 10 seconds)........................+260oC Max. Junction Temperature.................................................+175oC
MT5C2568 AS5C2568
SRAM
*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TC < 125oC or -40oC to +85oC; VCC = 5.0V +10%)
DESCRIPTION Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage 0VCONDITIONS CE\Vcc-0.2V; Vcc = MAX VIN<+0.2V or >Vcc-0.2V; f = 0 Hz, Outputs Open "L" Version Only
t
CONDITIONS
SYM MIN MAX UNITS NOTES V 1 VIH 2.2 VCC+0.5 VIL ILI ILo VOH VOL
-12 -15 MAX -20 -25
-0.5 -10 -10 2.4
0.8 10 10
V A A V
1,2
1 1
0.4
V
DESCRIPTION Power Supply Current: Operating
SYM Icc
-35
-45 UNITS NOTES mA 3
190 180 170 160 150 150
ISBT
60
50
40
35
35
35
mA
ISBC ISBC2
20 4
20 4
20 4
20 4
20 4
20 4
mA mA
CAPACITANCE
PARAMETER Input Capacitance Output Capacitance CONDITIONS TA = 25 C, f = 1MHz Vcc = 5V
o
SYM CIN CIO
MAX 11 11
UNITS pF pF
NOTES 4 4
MT5C2568 / AS5C2568 Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
Austin Semiconductor, Inc.
MT5C2568 AS5C2568
SRAM
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Note 5) (-55oC < TC < 125oC or -40oC to +85oC; VCC = 5.0V +10%)
DESCRIPTION READ CYCLE READ cycle time Address access time Chip enable access time Output hold from address change Chip enable to output in Low-Z Chip disable to output in High-Z Output enable to access time Output enable to output in Low-Z SYM tRC tAA tACE tOH tLZCE tHZCE tAOE tLZOE 0 7 12 10 10 0 2 10 8 0 0 7 15 12 12 0 0 12 10 0 0 10 2 2 7 6 0 10 20 15 15 0 0 15 10 0 0 10 -12 -15 -20 MIN MAX MIN MAX MIN MAX 12 12 12 3 3 10 8 0 10 25 20 20 0 0 20 15 0 3 15 15 15 15 3 3 10 10 0 15 35 30 30 0 0 30 20 0 3 35 20 20 20 3 3 15 15 2 35 45 40 40 0 0 40 20 3 3 20 MIN 25 25 25 3 3 35 20 0 20 -25 MAX MIN 35 35 35 3 3 20 20 -35 MAX -45 MIN MAX 45 45 45 UNITS NOTES ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 7 6, 7 6 7 6, 7
Output disable to output in High-Z tHZOE WRITE CYCLE WRITE cycle time tWC Chip enable to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width Data setup time Data hold time Write disable to output in Low-Z Write enable to output in High-Z tCW tAW tAS tAH tWP tDS tDH tLZWE tHZWE
MT5C2568 / AS5C2568 Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
Austin Semiconductor, Inc.
AC TEST CONDITIONS
Input pulse levels....................................................Vss to 3V Input rise and fall times.....................................................5ns Input timing reference level.............................................1.5V Output reference level......................................................1.5V Output load.................................................See figures 1 & 2 +5V 480 Q 255 30 pF Q 255
MT5C2568 AS5C2568
+5V 480 5 pF
SRAM
NOTES
1. 2. 3. All voltages referenced to VSS (GND). -3V for pulse width < 20ns ICC is dependent on output loading and cycle rates. The specified value applies with the outputs unloaded, and f= 1 Hz. t RC (MIN) This parameter is guaranteed but not tested. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. t HZCE, tHZOE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured 500mV typical from steady state voltage, allowing for actual tester RC time constant. 7.
Fig. 1 OUTPUT LOAD EQUIVALENT
Fig. 2 OUTPUT LOAD EQUIVALENT
4. 5. 6.
At any given temperature and voltage condition, tHZCE is less than tLZCE, and tHZWE is less than tLZWE. 8. WE\ is HIGH for READ cycle. 9. Device is continuously selected. Chip enables and output enables are held in their active state. 10. Address valid prior to, or coincident with, latest occurring chip enable. 11. tRC = Read Cycle Time. 12. Chip enable (CE\) and write enable (WE\) can initiate and terminate a WRITE cycle.
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
DESCRIPTION VCC for Retention Data CE\ > (VCC-0.2V) Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time VIN > (VCC-0.2V) or < 0.2V ICCDR 1 mA CONDITIONS SYM VDR MIN 2 MAX UNITS V NOTES
tCDR tR
0 tRC
--
ns ns
4 4, 11
LOW Vcc DATA RETENTION WAVEFORM
VCC
t
DATA RETENTION MODE 4.5V CDR V DR VDR > 2V 4.5V
t
R
MT5C2568 / AS5C2568 Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
432 4321 4321 1 4321
321 321 321 321
CE\
VIH VIL
4215 3325 876 42114321 33214321 832 42114321 32114321 876 3325 4765 876
87654321 321 21 87654321 87654321 87654321
DON'T CARE UNDEFINED
Austin Semiconductor, Inc.
MT5C2568 AS5C2568
SRAM
READ CYCLE NO. 1
tRC ADDRESS tAA tOH DQ
PREVIOUS DATA VALID VALID
8, 9
DATA VALID
READ CYCLE NO. 2
tRC CE\ tAOE
7, 8, 10, 12
tHZOE tLZOE OE\ tLZCE tACE DQ tPU tPD Icc
DATA VALID
tHZCE
MT5C2568 / AS5C2568 Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
Austin Semiconductor, Inc.
WRITE CYCLE NO. 1 12 (Chip Enabled Controlled)
tWC ADDRESS tAW tAH tAS CE\ tWP1 WE\ tDS D Q HIGH Z
DATA VAILD
MT5C2568 AS5C2568
SRAM
tCW
tDH
WRITE CYCLE NO. 2 7, 12 (Write Enabled Controlled)
tWC ADDRESS tAW tAH tCW CE\ tAS tWP1 WE\ tDH D Q
HIGH-Z
DATA VALID
NOTE: Output enable (OE\) is inactive (HIGH).
MT5C2568 / AS5C2568 Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #108 (Package Designator C) SMD 5962-88662, Case Outline N
MT5C2568 AS5C2568
SRAM
D
S2
Q
A
L
E S1 b2 e b
eA c
SMD SPECIFICATIONS MIN MAX SYMBOL A --0.225 b 0.014 0.026 b2 0.045 0.065 c 0.008 0.018 D --1.485 E 0.240 0.310 eA 0.300 BSC e 0.100 BSC L 0.125 0.200 Q 0.015 0.070 S1 0.005 --S2 0.005 --NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C2568 / AS5C2568 Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #110 (Package Designator CW) SMD 5962-88662, Case Outline X
MT5C2568 AS5C2568
SRAM
D
S2
Q
A
L
E S1 b2 e b
eA c
SYMBOL A b b2 c D E eA e L Q S1 S2
SMD SPECIFICATIONS MIN MAX --0.232 0.014 0.026 0.045 0.065 0.008 0.018 --1.490 0.500 0.610 0.600 BSC 0.100 BSC 0.125 0.200 0.015 0.060 0.005 --0.005 ---
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C2568 / AS5C2568 Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #204 (Package Designator EC) SMD 5962-88662, Case Outline U
D1 B2 D2
MT5C2568 AS5C2568
SRAM
L1 E3 E e E1 E2
D hx45 o L D3 A1 A B1
SYMBOL A A1 B1 B2 D D1 D2 D3 E E1 E2 E3 e h L L1
SMD SPECIFICATIONS MIN MAX 0.060 0.120 0.050 0.088 0.022 0.028 0.072 REF 0.342 0.358 0.200 BSC 0.100 BSC --0.358 0.540 0.560 0.400 BSC 0.200 BSC --0.558 0.050 BSC 0.040 REF 0.045 0.055 0.075 0.095
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C2568 / AS5C2568 Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #208 (Package Designator ECW) SMD 5962-88662, Case Outline Y
D1 B2 D2
MT5C2568 AS5C2568
SRAM
L1 E3 E e E1 E2
D hx45o L B1 D3 A1 A
SYMBOL A A1 B1 B2 D D1 D2 D3 E E1 E2 E3 e h L L1
SMD SPECIFICATIONS MIN MAX 0.060 0.120 0.050 0.088 0.022 0.028 0.072 REF 0.442 0.458 0.300 BSC 0.150 BSC --0.458 0.540 0.560 0.400 BSC 0.200 BSC --0.558 0.050 BSC 0.040 REF 0.045 0.055 0.075 0.095
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C2568 / AS5C2568 Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #302 (Package Designator F) SMD 5962-88662, Case Outline T
MT5C2568 AS5C2568
SRAM
e
b D
S
Top View
L c
E A Q E2 E3
SYMBOL A b c D E E2 E3 e L Q S
SMD SPECIFICATIONS MIN MAX 0.090 0.130 0.015 0.019 0.004 0.009 --0.740 0.380 0.420 0.180 --0.030 --0.050 BSC 0.250 0.370 0.026 0.045 0.000 0.045
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C2568 / AS5C2568 Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #500 (Package Designator DCJ)
A
MT5C2568 AS5C2568
SRAM
e
D
A3
B1 b
E1
A2
E
SYMBOL A A2 A3 B1 b D E E1 e
ASI SPECIFICATIONS MIN MAX 0.116 0.166 0.026 0.036 --0.166 0.030 0.040 0.015 0.019 --0.740 0.380 0.420 0.395 0.410 0.050 BSC
* All measurements are in inches.
MT5C2568 / AS5C2568 Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
13
Austin Semiconductor, Inc.
MT5C2568 AS5C2568
SRAM
ORDERING INFORMATION
EXAMPLE: MT5C2568CW-25L/XT Package Type C CW C CW C CW C CW C CW C CW C CW C CW CW EXAMPLE: MT5C2568ECW-15L/IT Package Type EC ECW EC ECW EC ECW EC ECW EC ECW EC ECW EC ECW EC ECW ECW Device Number MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 Speed ns Options** Process -12 -12 -15 -15 -20 -20 -25 -25 -35 -35 -45 -45 -55 -55 -70 -70 -100 L L L L L L L L L L L L L L L L L /* /* /* /* /* /* /* /* /* /* /* /* /* /* /* /* /* Device Number MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 Speed ns Options** Process -12 -12 -15 -15 -20 -20 -25 -25 -35 -35 -45 -45 -55 -55 -70 -70 -100 L L L L L L L L L L L L L L L L L /* /* /* /* /* /* /* /* /* /* /* /* /* /* /* /* /*
EXAMPLE: MT5C2568F-55/XT Package Type F F F F F F F F F
EXAMPLE: MT5C2568DCJ-70L/IT Package Type DCJ DCJ DCJ DCJ DCJ DCJ DCJ DCJ
Device Number MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568
Speed ns Options** Process -12 -15 -20 -25 -35 -45 -55 -70 -100 L L L L L L L L L /* /* /* /* /* /* /* /* /*
Device Number MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568
Speed ns Options** Process -12 -15 -20 -25 -35 -45 -55 -70 L L L L L L L L /* /* /* /* /* /* /* /* /* /* /* /* /* /* /* /*
*AVAILABLE PROCESSES IT = Industrial Temperature Range -40oC to +85oC XT = Extended Temperature Range -55oC to +125oC 883C = Full Military Processing -55oC to +125oC 12ns offered in IT only **DEFINITION OF OPTIONS 2V Data Retention / Low Power
MT5C2568 / AS5C2568 Rev. 4.5 06/05
L
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
14
Austin Semiconductor, Inc.
MT5C2568 AS5C2568
SRAM
ASI TO DSCC PART NUMBER CROSS REFERENCE*
ASI Package Designator C & CW
ASI Part # MT5C2568C-20/883C MT5C2568C-25/883C MT5C2568C-35/883C MT5C2568C-45/883C MT5C2568C-55/883C MT5C2568C-70/883C MT5C2568CW-20/883C MT5C2568CW-25/883C MT5C2568CW-35/883C MT5C2568CW-45/883C MT5C2568CW-55/883C MT5C2568CW-70/883C MT5C2568CW-100/883C AS5C2568C-12L/883C AS5C2568C-15L/883C AS5C2568C-17L/883C AS5C2568C-20L/883C AS5C2568C-25L/883C AS5C2568C-35L/883C AS5C2568C-45L/883C AS5C2568C-55L/883C AS5C2568C-70L/883C AS5C2568CW-12L/883C AS5C2568CW-15L/883C AS5C2568CW-17L/883C AS5C2568CW-20L/883C AS5C2568CW-25L/883C AS5C2568CW-35L/883C AS5C2568CW-45L/883C AS5C2568CW-55L/883C AS5C2568CW-70L/883C SMD Part # 5962-8866207NX 5962-8866206NX 5962-8866205NX 5962-8866204NX 5962-8866203NX 5962-8866202NX 5962-8866207XX 5962-8866206XX 5962-8866205XX 5962-8866204XX 5962-8866203XX 5962-8866202XX 5962-8866201XX 5962-8855213UA 5962-8855212UA 5962-8855211UA 5962-8855210UA 5962-8855206UA 5962-8855205UA 5962-8855209UA 5962-8855208UA 5962-8855207UA 5962-8855213XA 5962-8855212XA 5962-8855211XA 5962-8855210XA 5962-8855206XA 5962-8855205XA 5962-8855209XA 5962-8855208XA 5962-8855207XA
ASI Package Designator EC & ECW
ASI Part # MT5C2568EC-20/883C MT5C2568EC-25/883C MT5C2568EC-35/883C MT5C2568EC-45/883C MT5C2568EC-55/883C MT5C2568EC-70/883C MT5C2568ECW-20/883C MT5C2568ECW-25/883C MT5C2568ECW-35/883C MT5C2568ECW-45/883C MT5C2568ECW-55/883C MT5C2568ECW-70/883C MT5C2568ECW-100/883C AS5C2568EC-12L/883C AS5C2568EC-15L/883C AS5C2568EC-17L/883C AS5C2568EC-20L/883C AS5C2568EC-25L/883C AS5C2568EC-35L/883C AS5C2568EC-45L/883C AS5C2568EC-55L/883C AS5C2568EC-70L/883C AS5C2568ECW-12L/883C AS5C2568ECW-15L/883C AS5C2568ECW-17L/883C AS5C2568ECW-20L/883C AS5C2568ECW-25L/883C AS5C2568ECW-35L/883C AS5C2568ECW-45L/883C AS5C2568ECW-55L/883C AS5C2568ECW-70L/883C SMD Part # 5962-8866207UX 5962-8866206UX 5962-8866205UX 5962-8866204UX 5962-8866203UX 5962-8866202UX 5962-8866207YX 5962-8866206YX 5962-8866205YX 5962-8866204YX 5962-8866203YX 5962-8866202YX 5962-8866201YX 5962-8855213MA 5962-8855212MA 5962-8855211MA 5962-8855210MA 5962-8855206MA 5962-8855205MA 5962-8855209MA 5962-8855208MA 5962-8855207MA 5962-8855213YA 5962-8855212YA 5962-8855211YA 5962-8855210YA 5962-8855206YA 5962-8855205YA 5962-8855209YA 5962-8855208YA 5962-8855207YA
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
MT5C2568 / AS5C2568 Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
15
Austin Semiconductor, Inc.
MT5C2568 AS5C2568
SRAM
ASI TO DSCC PART NUMBER CROSS REFERENCE*
ASI Package Designator F
ASI Part # MT5C2568F-20/883C MT5C2568F-25/883C MT5C2568F-35/883C MT5C2568F-45/883C MT5C2568F-55/883C MT5C2568F-70/883C MT5C2568F-100/883C AS5C2568F-12L/883C AS5C2568F-15L/883C AS5C2568F-17L/883C AS5C2568F-20L/883C AS5C2568F-25L/883C AS5C2568F-35L/883C AS5C2568F-45L/883C AS5C2568F-55L/883C AS5C2568F-70L/883C SMD Part # 5962-8866207TX 5962-8866206TX 5962-8866205TX 5962-8866204TX 5962-8866203TX 5962-8866202TX 5962-8866201TX 5962-8855213TA 5962-8855212TA 5962-8855211TA 5962-8855210TA 5962-8855206TA 5962-8855205TA 5962-8855209TA 5962-8855208TA 5962-8855207TA
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
MT5C2568 / AS5C2568 Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
16

▲Up To Search▲

Price & Availability of MT5C2568F-20883C

	To Download MT5C2568F-20883C Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .